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US 2010/0059837 A1Published application
Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the Same
AssigneeHynix Semiconductor Inc.
InventorsHyun Jeong Kim, Sung Woong Chung
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Abstract
A spin transfer torque memory device and a method for manufacturing the same. The spin transfer torque memory device comprises a MRAM cell using a MTJ and a vertical transistor. A common source line is formed in the bottom of the vertical transistor, thereby obtaining the high-integrated and simplified memory device.
Claims18
A spin transfer torque memory device comprising:
- a pillar including a region surrounded by a surrounding gate electrode;
- a common source line for connecting lower portion of the pillar in common;
- and
- a magnetic tunnel junction (MTJ) formed over the pillar.
1 more element
A method for manufacturing a spin transfer torque memory device, the method comprising:
- forming a surrounding gate electrode on a circumference of a pillar;
- implanting impurities into a silicon substrate to form a common source line;
- and
- forming a MTJ over the pillar.
1 more element
A method for manufacturing a spin transfer torque memory device, the method comprising:
- forming a metal film over a silicon substrate;
- selectively etching the metal film to expose the silicon substrate of a pillar region;
- growing the exposed silicon substrate to form a pillar;
- and
- forming a MTJ over the pillar.
2 more elements
Dependencies are inferred from the claim text.