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US 2010/0059762 A1Published application
Heat removal facilitated with diamond-like carbon layer in soi structures
AssigneeSpansion LLC
InventorsTim Z. Hossain, Daniel E. Posey
Life of this patent
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Abstract
Described are Silicon-on-Insulator devices containing a diamond-like carbon layer, methods of making the Silicon-on-Insulator devices, and methods of using the Silicon-on-Insulator devices.
Claims19
A silicon-on-insulator structure, comprising:
- a silicon substrate layer;
- an insulation layer over the silicon substrate layer;
- a DLC layer over and adjacent at least 50% of the horizontal surface of the insulation layer, the DLC layer having at least one region having a thickness from about 100 Å to less than 5,000 Å;
- and
- a silicon device layer comprising silicon over the DLC layer.
2 more elements
A method of forming a silicon-on-insulator substrate, comprising:
- providing a first silicon substrate;
- forming a DLC layer over the first silicon substrate, the DLC layer having at least one region having a thickness from about 100 Å to about 5000 Å;
- forming a first insulation layer over the DLC layer to provide a first structure;
- providing a second structure comprising a second silicon layer and a second insulation layer;
- bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer;
- and
- removing a portion of the first silicon layer thereby providing the silicon-on-insulator substrate.
4 more elements
A method of facilitating heat removal from a device layer of a silicon-on-insulator substrate comprising bulk silicon, an insulation layer over the bulk silicon, and a silicon device layer over the insulation layer, comprising:
- forming a DLC layer having one of a first thickness from about 150 Å to about 800 Å and a second thickness from about 1,600 Å to about 2,750 Å in at least one region between the silicon device layer and the insulation layer.
Dependencies are inferred from the claim text.