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US 2010/0059756 A1Published application
Thin film transistor and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-bae Park, Myung-kwan Ryu, Byung-wook Yoo, Sang-yoon Lee, Tae-sang Kim, Jang-yeon Kwon, Kyung-seok Son, Ji-sim Jung
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Abstract
Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.
Claims20
A thin film transistor (TFT) comprising:
- an intermediate layer between a channel and a source and drain,
- wherein the intermediate layer covers both sides and a portion of an upper surface of the channel.
A method of manufacturing a thin film transistor (TFT) comprising:
- forming an intermediate layer between a channel and a source and drain,
- wherein forming the intermediate layer includes covering both sides and a portion of an upper surface of the channel.
Dependencies are inferred from the claim text.