Methods Of Forming Structures Supported By Semiconductor Substrates

A method of forming structures, comprising:

• forming a radiation-imageable material over a semiconductor substrate;
• photolithographically patterning the radiation-imageable material into at least two separated features;
• the separated features having one or more gaps between them;
• forming a second material over the at least two separated features, and across the one or more gaps between the at least two separated features;
• baking the features having the second material thereover to release at least one substance which alters the second material;
• the non-altered second material being selectively removable relative to the altered second material, and the features being selectively removable relative to the altered material;
• the baking transferring the at least one substance from the features into regions of the second material proximate the features to alter said regions while leaving other regions of the second material non-altered;
• selectively removing the non-altered regions of the second material relative to the altered regions of the second material;
• and
• selectively removing the features relative to the altered regions of the second material to leave at least one structure of the altered regions of the second material.