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AssigneesNational Institute of Advanced Industrial Science and Technology, Nissan Motor Co., Ltd.
InventorsNorihiko Kiritani, Satoshi Tanimoto, Kazuo Arai
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A semiconductor manufacturing apparatus which performs a rapid heat treatment in which metallic thin films 11 and 12 to be metallic electrodes are formed on a top surface and a bottom surface of a silicon carbide semiconductor substrate 10, and thereafter, the silicon carbide semiconductor substrate 10 is heated. The semiconductor manufacturing apparatus is configured such that the silicon carbide semiconductor substrate 10 is held by a holding structure 20 by means of a contact with an exterior of a region formed with the metallic thin films 11 and 12 on the silicon carbide semiconductor substrate 10, and the held silicon carbide semiconductor substrate 10 is placed in an interior of a heating chamber of the semiconductor manufacturing apparatus.
A semiconductor manufacturing apparatus which performs a process in which a metallic thin film which is a metallic electrode is formed on at least one of one main surface and the other main surface of a semiconductor substrate, and thereafter, the semiconductor substrate is rapidly heated, the semiconductor manufacturing apparatus, comprising
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A semiconductor manufacturing apparatus, wherein a substrate to be thermally processed is sandwiched between a pair of plate thermal conductors capable of heating by infrared, and the pair of thermal conductors are heated by infrared from outside the pair of thermal conductors, whereby the substrate to be thermally processed is rapidly heat treated.
A semiconductor device in which a metallic thin film which is a metal electrode is formed on at least one surface of one main surface and the other main surface of a semiconductor substrate, and thereafter, a rapid heat treatment is applied, the semiconductor device comprising
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Dependencies are inferred from the claim text.