Substrate processing method, computer-readable storage medium and substrate processing system

A computer-readable storage medium storing a program running on a computer of a control unit for controlling a substrate processing system to cause the substrate processing system to execute a substrate processing method,

• said substrate processing method comprising:
• a temperature correcting step of forming a resist pattern on a substrate, then measuring a first dimension of the resist pattern, and correcting a processing temperature of thermal processing based on the measured first dimension from a previously obtained relation between a dimension of a resist pattern and a processing temperature of thermal processing during photolithography processing;
• a dimension measuring step of performing thermal processing at the processing temperature corrected in said temperature correcting step to form a resist pattern on a substrate, and then measuring a second dimension of the resist pattern;
• a dimension classifying step of classifying a distribution within the substrate of the measured second dimension into a linear component expressed by an approximated curved surface and a nonlinear component other than the linear component;
• and
• an exposure condition correcting step of dividing the linear component into a plurality of regions, and correcting a processing condition of exposure processing for each of the regions based on the linear component in each of the regions from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing during photolithography processing,
• wherein thermal processing at the processing temperature corrected in said temperature correcting step and exposure processing under the processing condition corrected in said exposure condition correcting step are performed to form a predetermined resist pattern on a substrate.

A substrate processing system for performing photolithography processing on a substrate to form a resist pattern on the substrate, said system comprising:

• a thermal processing unit for performing thermal processing on a substrate;
• an aligner for performing exposure processing on the substrate;
• a pattern dimension measuring unit for measuring a dimension of the resist pattern on the substrate;
• and
• a control unit for correcting a processing temperature of the thermal processing in said thermal processing unit and a processing condition of the exposure processing in said aligner,
• wherein said control unit controls said thermal processing unit, said aligner, and said pattern dimension measuring unit to execute a temperature correcting step of forming a resist pattern on a substrate, then measuring a first dimension of the resist pattern, and correcting the processing temperature of the thermal processing based on the measured first dimension from a previously obtained relation between a dimension of a resist pattern and a processing temperature of thermal processing during photolithography processing;
• a dimension measuring step of performing thermal processing at the processing temperature corrected in said temperature correcting step to form a resist pattern on a substrate, and then measuring a second dimension of the resist pattern;
• a dimension classifying step of classifying a distribution within the substrate of the measured second dimension into a linear component expressed by an approximated curved surface and a nonlinear component other than the linear component;
• and an exposure condition correcting step of dividing the linear component into a plurality of regions, and correcting the processing condition of the exposure processing for each of the regions based on the linear component in each of the regions from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing during photolithography processing, wherein thermal processing at the processing temperature corrected in said temperature correcting step and exposure processing under the processing condition corrected in said exposure condition correcting step are performed to form a predetermined resist pattern on a substrate.