Phase Shift Mask for Double Patterning and Method for Exposing Wafer Using the Same

Abstract

A phase shift mask includes a substrate; a first phase shift pattern formed in a groove shape having a first depth within the substrate so that when a first light with a first wave length is incident, the first light transmitted through a surface of the substrate and the first light transmitted through the groove are destructively interfered and when a second light with a second wave length is incident, the second light transmitted through the surface of the substrate and the second light transmitted through the groove have a phase difference of 180 degrees; and a second phase shift pattern formed in a groove shape having a second depth within the substrate so that when the first light with the first wave length is incident, the first light transmitted through the surface of the substrate and the first light transmitted through the groove have a phase difference of 180 degrees and when the second light with the second wave length is incident, the second light transmitted through the surface of the substrate and the second light transmitted through the groove are destructively interfered.

Dependencies are inferred from the claim text.