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US 2009/0267197 A1Published application
Semiconductor device for preventing the leaning of storage nodes and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsHun KIM, Byung Soo EUN
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Abstract
A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support a plurality of cylinder type storage nodes. The support patterns are formed of a BN layer and have a hexagonal structure. The BN layer forming the support patterns has compressive stress as opposed to tensile stress and can therefore withstand cracking in the support patterns.
Claims12
A semiconductor device comprising:
- support patterns formed to support a plurality of cylinder type storage nodes,
- wherein the support patterns comprise a boron nitride (BN) layer.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an insulation layer on a semiconductor substrate;
- forming a BN layer on the insulation layer;
- etching the BN layer and the insulation layer to expose the semiconductor substrate and form a plurality of holes;
- forming cylinder type storage nodes in the respective holes;
- etching a portion of the BN layer to form support patterns between the cylinder type storage nodes to support the storage nodes;
- and
- removing the insulation layer remaining after formation of the support patterns.
4 more elements
Dependencies are inferred from the claim text.