Back to results
US 2009/0267192 A1Published application
Cmp methods avoiding edge erosion and related wafer
AssigneeInternational Business Machines Corporation
InventorsFelix P. Anderson, Anthony K. Stamper
Life of this patent
Estimating the term…
Abstract
Methods of avoiding chemical mechanical polish (CMP) edge erosion and a related wafer are disclosed. In one embodiment, the method includes providing a wafer; forming a first material across the wafer; forming a second material at an outer edge region of the wafer, leaving a central region of the wafer devoid of the second material; and performing chemical mechanical polishing (CMP) on the wafer. The second material diminishes CMP edge erosion.
Claims20
A method comprising:
- providing a wafer;
- forming a first material across the wafer;
- forming a second material at an outer edge region of the wafer, leaving a central region of the wafer devoid of the second material;
- and
- performing chemical mechanical polishing (CMP) on the wafer.
2 more elements
A method comprising:
- providing a wafer;
- forming a first material across the wafer;
- forming a photoresist at an outer edge region of the wafer that is less than approximately 2 millimeter in width, leaving a central region of the wafer devoid of the photoresist;
- performing chemical mechanical polishing (CMP) on the wafer;
- and
- removing the photoresist from the outer edge region.
3 more elements
A wafer comprising:
- a plurality of integrated circuit (IC) chips formed in a substrate having an outer edge and a bevel, the substrate further comprising an upper surface made planar by polishing;
- and
- a dielectric material on at least one of the outer edge or the bevel of the substrate.
Dependencies are inferred from the claim text.