Semiconductor device having a reduced fuse thickness and method for manufacturing the same

A semiconductor device comprising:

• a first insulation layer;
• a first metal pattern formed in the first insulation layer and having a center portion that is removed and filled with the first insulation layer;
• a second insulation layer formed on the first metal pattern and the first insulation layer, wherein a portion of the second insulation layer is partially removed on a portion of the first insulation layer that fills the center portion of the first metal pattern;
• contact plugs formed in the second insulation layer on the first metal pattern;
• a second metal pattern formed on the contact plugs and in the partially removed portion of the second insulation layer to form a pad in conjunction with the first metal pattern and the contact plugs, and the second metal pattern having a longitudinal sectional shape having a raised peripheral portion and a lowered center portion;
• and
• a fuse composed of a third metal pattern formed on the second insulation layer separately from the pad positioned above the lowered center portion of the second metal pattern.

A semiconductor device comprising:

• a first insulation layer;
• a second insulation layer formed on the first insulation layer, wherein a portion of the second insulation layer is removed;
• a second metal pattern formed in the removed portion of the second insulation layer and on a portion of the second insulation layer adjacent to the removed portion, and having a longitudinal sectional shape which has a raised peripheral portion and a lowered center portion;
• a fuse composed of a third metal pattern formed on the second insulation layer separately from the second metal pattern to be positioned higher than the center portion of the second metal pattern;
• a third insulation layer formed on the second insulation layer including the second metal pattern and the fuse;
• contact plugs formed in the third insulation layer to contact the peripheral portion of the second metal pattern;
• and
• a first metal pattern formed on the third insulation layer including the contact plugs to form a pad in conjunction with the second metal pattern and the contact plugs, wherein a center portion of the first metal pattern is removed.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming an interlayer dielectric on a semiconductor substrate including a pad part and a fuse part;
• forming a first insulation layer on the interlayer dielectric;
• forming a first metal pattern in the first insulation layer of the pad part and removing and filling a center portion of the first metal pattern with the first insulation layer;
• forming a second insulation layer on the first metal pattern and the first insulation layer;
• etching the second insulation layer and removing a portion of the second insulation layer that is formed on the first insulation layer that fills the center portion of the first metal pattern and defining contact holes to expose the first metal pattern;
• forming contact plugs in the contact holes;
• forming a second metal pattern on the contact plugs of the pad part and in the removed portion of the second insulation layer such that the second metal pattern has a longitudinal sectional shape having a raised peripheral portion and a lowered center portion to constitute a pad composed of the first metal pattern, the contact plugs, and the second metal pattern;
• forming a fuse composed of a third metal pattern on the second insulation layer of the fuse part and the fuse being formed at a position above the center portion of the second metal pattern;
• and
• forming a third insulation layer on the second insulation layer to cover the pad and the fuse.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming an interlayer dielectric on a semiconductor substrate including a pad part and a fuse part;
• forming a first insulation layer on the interlayer dielectric;
• forming a second insulation layer on the first insulation layer;
• removing a portion of the second insulation layer in the pad part;
• forming a second metal pattern in the removed portion of the second insulation layer and on a portion of the second insulation layer adjacent to the removed portion to have a longitudinal sectional shape which has a raised peripheral portion and a lowered center portion, and at the same time, forming a fuse, composed of a third metal pattern, on the second insulation layer in the fuse part to be positioned higher than the center portion of the second metal pattern;
• forming a third insulation layer on the second insulation layer to cover the second metal pattern and the fuse;
• forming contact plugs in the third insulation layer on the peripheral portion of the second metal pattern;
• and
• forming a first metal pattern on the third insulation layer including the contact plugs to form a pad in conjunction with the second metal pattern and the contact plugs, wherein a center portion of the first metal pattern is removed.