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US 2009/0267152 A1Published application
Semiconductor device and method of manufacturing a semiconductor device
AssigneeAdvanced Micro Devices, Inc.
InventorsPaul R. Besser, Scott D. Luning
Life of this patent
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Abstract
A semiconductor device is disclosed having a conductive gate structure overlying a semiconductor layer having a major surface. An isolation material is recessed within a trench region below the major surface of the semiconductor layer. An epitaxial layer is formed overlying a portion of the major surface and on an active region forming a sidewall of the trench.
Claims20
A device comprising:
- a first layer comprising a semiconductor material having a major surface;
- a conductive gate structure overlying the first layer major surface at a first location;
- an isolation material at a second location, the isolation material comprising a surface recessed substantially below the first layer major surface;
- and
- an epitaxial layer on the first layer major surface between the first location and the second location and on a sidewall of the first layer abutting the isolation material.
2 more elements
A method comprising:
- forming an opening for a shallow trench isolation (STI) feature to form an exposed sidewall portion of an active region of a semiconductor layer;
- forming an epitaxial layer overlying a major surface of the semiconductor layer and the exposed sidewall portion;
- and
- forming a silicide at the epitaxial layer overlying the major surface and the exposed sidewall portion.
1 more element
Dependencies are inferred from the claim text.