Semiconductor Device and Method for Fabricating the Same
AssigneeHynix Semiconductor Inc.
InventorSu Ock Chung
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Abstract
A method for fabricating a semiconductor device comprises: forming a gate pattern over a silicon active region and an insulating layer, which form a semiconductor substrate; removing the silicon active region exposed between the gate patterns; and filling a space between the gate patterns to form a plug.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a gate pattern over a silicon active region and an insulating layer, exposing the silicon active region between the gate patterns;
- removing the silicon active region exposed between the gate patterns;
- and
- filling a space between the gate patterns to form a plug.
A method for fabricating a semiconductor device, the method comprising:
- etching a portion of a substrate to form a trench:
- forming a protective film on sidewalls of the trench;
- and
- forming a floating body of a transistor by etching a lower portion of the trench.
A semiconductor device comprising a floating body transistor that comprises a floating body comprising a lower portion broader than an upper portion in a bottom of a gate pattern as a cell transistor.
Dependencies are inferred from the claim text.