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US 2009/0260976 A1Published application
Magnetron sputtering apparatus and production method of thin film
AssigneeCanon Anelva Corporation
InventorNoboru Nakamura
Life of this patent
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Abstract
To form a LaB6 thin film by magnetron sputtering, a target 11 is applied with DC power and high-frequency component power having a low-frequency component filtered out from a high-frequency power source 193, and a substrate holder 13 is applied with DC power from another DC power source 221 during the application of the high-frequency component power and the DC power. Thus, monocrystallinity in a large-area domain direction of the obtained LaB6 thin film is improved.
Claims17
A magnetron sputtering apparatus, comprising:
- a first chamber,
- an exhaust device for vacuum exhausting the inside of the chamber,
- a cathode capable of attaching a target configured of a boron-lanthanum compound containing boron and lanthanum atoms,
- a high-frequency power source for applying high-frequency power to the cathode,
- a first DC power source for applying DC power to the cathode during the application of the high-frequency power,
- a magnetic field generation device for exposing the surface of the target to a magnetic field,
- a first substrate holder for holding a substrate at a position opposed to the cathode, and
- a second DC power source for applying DC power to the first substrate holder.
5 more elements
A magnetron sputtering apparatus, comprising:
- a first chamber,
- an exhaust device for vacuum exhausting the inside of the chamber,
- a cathode capable of attaching a target configured of a boron-lanthanum compound containing boron and lanthanum atoms,
- a high-frequency power source for applying high-frequency power to the cathode,
- a first DC power source for applying DC power to the cathode during the application of the high-frequency power,
- a filter for filtering out a low-frequency component from the high-frequency power source,
- a magnetic field generation device for exposing the surface of the target to a magnetic field, and
- a first substrate holder for holding a substrate at a position opposed to the cathode.
5 more elements
A magnetron sputtering apparatus, comprising:
- a first chamber,
- an exhaust device for vacuum exhausting the inside of the chamber,
- a cathode capable of attaching a target configured of a boron-lanthanum compound containing boron and lanthanum atoms,
- a high-frequency power source for applying high-frequency power to the cathode,
- a first DC power source for applying DC power to the cathode during the application of the high-frequency power,
- a filter for filtering out a low-frequency component from the high-frequency power source,
- a magnetic field generation device for exposing the surface of the target to a magnetic field,
- a first substrate holder for holding a substrate at a position opposed to the cathode, and
- a second DC power source for applying DC power to the first substrate holder.
6 more elements
A magnetron sputtering apparatus, comprising:
- a first chamber,
- an exhaust device for vacuum exhausting the inside of the chamber,
- a cathode capable of attaching a target configured of a boron-lanthanum compound containing boron and lanthanum atoms,
- a first high-frequency power source for applying high-frequency power to the cathode,
- a first DC power source for applying DC power to the cathode during the application of the high-frequency power,
- a magnetic field generation device for exposing the surface of the target to a magnetic field,
- a substrate holder for holding a substrate at a position opposed to the cathode,
- a second DC power source for applying DC power to the substrate holder, and
- a second high-frequency power source for applying high-frequency power to the substrate holder.
6 more elements
A magnetron sputtering apparatus, comprising:
- a first chamber,
- an exhaust device for vacuum exhausting the inside of the chamber,
- a cathode capable of attaching a target configured of a boron-lanthanum compound containing boron and lanthanum atoms,
- a first high-frequency power source for applying high-frequency power to the cathode,
- a first DC power source for applying DC power to the cathode during the application of the high-frequency power,
- a filter for filtering out a low-frequency component from the first high-frequency power source,
- a magnetic field generation device for exposing the surface of the target to a magnetic field,
- a substrate holder for holding a substrate at a position opposed to the cathode,
- a second DC power source for applying DC power to the substrate holder, and
- a second high-frequency power source for applying high-frequency power to the substrate holder.
7 more elements
A magnetron sputtering apparatus, comprising:
- a first chamber,
- an exhaust device for vacuum exhausting the inside of the chamber,
- a cathode capable of attaching a target configured of a boron-lanthanum compound containing boron and lanthanum atoms,
- a first high-frequency power source for applying high-frequency power to the cathode,
- a first DC power source for applying DC power to the cathode during the application of the high-frequency power,
- a first filter for filtering out a low-frequency component from the first high-frequency power source,
- a magnetic field generation device for exposing the surface of the target to a magnetic field,
- a substrate holder for holding a substrate at a position opposed to the cathode,
- a second DC power source for applying DC power to the substrate holder,
- a second high-frequency power source for applying high-frequency power to the substrate holder, and
- a second filter for filtering out a low-frequency component from the second high-frequency power source.
8 more elements
A production method of a thin film, comprising:
- forming a boron-lanthanum compound thin film on a substrate held by a substrate holder in a vacuum exhausted atmosphere by a magnetron sputtering method using a target composed of a boron-lanthanum compound containing boron and lanthanum atoms, wherein:
- the target is applied with high-frequency component power resulting from filtering out a low-frequency component from a high-frequency power source and first DC power from a first DC power source, and
- the substrate holder is applied with second DC power from a second DC power source during the application of the high-frequency component power and DC power.
A production method of a thin film, comprising:
- forming a boron-lanthanum compound thin film on a substrate held by a substrate holder in a vacuum exhausted atmosphere by a magnetron sputtering method using a target composed of a boron-lanthanum compound containing boron and lanthanum atoms, wherein:
- the target is applied with high-frequency component power and first DC power from first DC power source, and
- the substrate holder is applied with second DC power from a second DC power source during the application of the high-frequency component power and DC power.
Dependencies are inferred from the claim text.