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US 2009/0260759 A1Published application
Method of improving adhesion of dielectric cap to copper
AssigneeSpansion LLC
InventorKing-Sang Lam
Life of this patent
Estimating the term…
Abstract
In a method of promoting adhesion between a copper body and a dielectric layer in contact therewith, the copper body and dielectric layer are placed in a vacuum chamber, in a chamber, the copper body and dielectric layer within the chamber are heated, and SiH4 is provided in the chamber.
Claims14
A method of promoting adhesion between a copper body and a dielectric layer in contact therewith comprising:
- placing the copper body and dielectric layer in a chamber;
- and
- providing SiH4 in the chamber.
A method of promoting adhesion between a copper body and a silicon nitride layer in contact therewith comprising:
- placing the copper body and silicon nitride layer in a chamber;
- applying a vacuum within the chamber;
- heating the copper body and silicon nitride layer within the chamber;
- and
- providing SiH4 in the chamber.
2 more elements
A method of promoting adhesion between a copper body and a dielectric layer in contact therewith comprising:
- diffusing copper atoms from the copper body into the dielectric layer.
Dependencies are inferred from the claim text.