Semiconductor structure
AssigneeAndigilog, Inc.
InventorsDerrick Tuten, David L. Cave
Life of this patent
Estimating the term…
Abstract
A fusible link between metallization layers of a semiconductor device comprises a tungsten plug deposited in a via interconnecting two aluminum metallization layers.
Claims31
A semiconductor device, comprising:
- a silicon substrate;
- a plurality of metal conductor paths separated by silicon dioxide, wherein each of the metal conductor paths is in a different plane;
- and
- a tungsten link disposed through the silicon dioxide and providing an electrical connection between the plurality of metal conductor paths, wherein in response to predetermined maximum current levels being applied for a predetermined time, the tungsten link is configured to permanently open the electrical connection.
A semiconductor device, comprising:
- a plurality of metallization layers;
- one or more silicon dioxide layers separating the plurality of metallization layers;
- and
- a tungsten link extending through one or more vias in the one or more silicon dioxide layers to connect at least two metallization layers of the plurality of metallization layers, wherein the tungsten link is configured to function as a programmable fuse link between the at least two metallization layers such that application of a predetermined current for a predetermined time to the at least two metallization layers results in the tungsten link permanently opening up.
A method for providing fUsible links in a semiconductor device, the method comprising:
- depositing a first metallization layer on the device;
- depositing one or more insulating layers on the first metallization layer;
- providing a via in the one or more insulating layers;
- depositing a tungsten plug in the via;
- and
- depositing a second metallization layer on the one or more insulating layers, such that the tungsten plug is in contact with both the first and second metallization layers;
- wherein the tungsten plug is configured to be responsive to a predetermined current being applied across the tungsten plug for a predetermined time by causing-an electrical connection provided by the tungsten plug to permanently open.
A method of programming a semiconductor device, the method comprising electrically connecting two metallization layers of a semiconductor device with a tungsten plug, wherein the tungsten plug is configured to respond to a predetermined maximum current being applied across the tungsten plug for a predetermined time by causing an electrical connection provided by the plug to open.
A semiconductor device, comprising means for electrically connecting two metallization layers of a semiconductor device, wherein the electrically connecting means is configured to respond to a predetermined maximum current being applied across the electrically connecting means for a predetermined time by causing an electrical connection provided by the electrically connecting means to open.
A semiconductor structure, comprising:
- a first metallization layer;
- a second metallization layer;
- one or more insulating layers disposed between the first and second metallization layer;
- and
- a tungsten link electrically connecting the first and second metallization layers, wherein the tungsten link is configured to respond to a predetermined maximum current being applied across the tungsten link for a predetermined time by causing the electrical connection provided by the tungsten link to open.
Dependencies are inferred from the claim text.