System and method of electrostatic discharge protection for signals at various voltages

A system for protecting an integrated circuit, the system comprising:

• a first transistor coupled to a first voltage and a second voltage, the first transistor including a first gate;
• a second transistor coupled to the first gate and the first voltage, the second transistor including a second gate;
• a third transistor coupled to the second gate and the first voltage, the third transistor including a third gate;
• and
• a capacitor coupled to the second gate without through any other component of the second transistor, the capacitor being further coupled to the second voltage;
• wherein:
• the third gate is configured to receive a first signal;
• and
• the second gate is configured to receive a second signal.

A system for protecting an integrated circuit, the system comprising:

• a first transistor including a first gate;
• a second transistor coupled to the first gate and a first voltage, the second transistor including a second gate;
• a third transistor coupled to the second gate and the first voltage, the third transistor including a third gate;
• a first capacitor coupled to the second gate without through any other component of the second transistor, the first capacitor being further coupled to a second voltage;
• a fourth transistor coupled to a third voltage and the second voltage, the fourth transistor including a fourth gate;
• a fifth transistor including an emitter, a base, and a collector, the fifth transistor coupled to the third voltage;
• a first diode coupled directly or indirectly to the second voltage and the fifth transistor;
• a second diode coupled to the base and the first voltage;
• and
• a clamping device coupled to the fourth gate and the second voltage;
• wherein:
• the third gate is configured to receive a first signal;
• and
• the second gate is configured to receive a second signal.

A system for protecting an integrated circuit, the system comprising:

• a first transistor coupled to a first voltage and a second voltage, the first transistor including a gate;
• a second transistor including an emitter, a base, and a collector;
• a first resistor including a first terminal and a second terminal, the first terminal being coupled to the base, the first terminal being different from the second terminal;
• a second resistor coupled to the gate without through any other component of the first transistor, the second resistor being further coupled to the second voltage;
• a first diode including an anode and a cathode, the anode being coupled to the second voltage, the cathode being coupled to the second terminal without through any other component of the first resistor;

A system for protecting an integrated circuit, the system comprising:

• a first transistor coupled to a first voltage and a second voltage, the first transistor including a gate;
• a second transistor including an emitter, a base, and a collector;
• a first resistor including a first terminal and a second terminal, the second terminal being coupled to the second voltage, the second terminal being different from the first terminal;
• a second resistor coupled to the gate without through any other component of the first transistor, the second resistor being further coupled to the second voltage;
• and
• a first diode including an anode and a cathode, the cathode being coupled to the base, the anode being coupled to the first terminal.

A method for protecting an integrated circuit, the method comprising:

• providing a system for protecting the integrated circuit, the system including a first transistor, a second transistor, a diode, and a resistor;
• receiving a voltage by the first transistor and the second transistor;
• causing a breakdown of the diode;
• turning on the second transistor in response to the breakdown of the diode;
• and
• turning on the first transistor in response to the second transistor being turned on;
• wherein the voltage is provided to the integrated circuit.