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US 2009/0155998 A1Published application
Atomic layer deposited tantalum containing adhesion layer
AssigneeIntel Corporation
InventorsSteven W. Johnston, Kerry Spurgin, Brennan L. Peterson
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Abstract
Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.
Claims20
A method of fabricating a contact, comprising:
- providing at least one dielectric layer;
- forming at least one opening extending through said at least one dielectric layer, wherein said opening is defined by at least one side;
- atomic layer depositing a tantalum containing adhesion layer on said at least one opening side, said tantalum containing adhesion layer comprising about 10% oxygen and about 25% carbon;
- and
- depositing at least one conductive material to fill said opening and abut said tantalum containing adhesion layer.
2 more elements
A method comprising:
- forming at least one dielectric layer;
- forming at least one opening in said at least one dielectric layer;
- extending a conductive material through said at least one opening in said at least one dielectric layer, said conductive material comprising copper;
- and
- atomic layer depositing a tantalum containing adhesion layer between said conductive material and said at least one dielectric layer, said tantalum containing adhesion layer comprising about 10% oxygen and 25% carbon, said tantalum containing adhesion layer comprising a thickness between about 5 and 25 angstroms.
2 more elements
Dependencies are inferred from the claim text.