Method for fabricating pitch-doubling pillar structures
AssigneeSanDisk 3D LLC
InventorsChristopher J. Petti, Steven J. Radigan
Life of this patent
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Abstract
A method of making a semiconductor device includes forming at least one device layer over a substrate, forming at least two spaced apart features over the at least one device layer, forming sidewall spacers on the at least two features, filling a space between a first sidewall spacer on a first feature and a second sidewall spacer on a second feature with a filler feature, selectively removing the sidewall spacers to leave the first feature, the filler feature and the second feature spaced apart from each other, and etching the at least one device layer using the first feature, the filler feature and the second feature as a mask.
Claims27
A method of making a semiconductor device, comprising:
- forming at least one device layer over a substrate;
- forming at least two spaced apart features over the at least one device layer;
- forming sidewall spacers on the at least two features;
- filling a space between a first sidewall spacer on a first feature and a second sidewall spacer on a second feature with a filler feature;
- selectively removing the sidewall spacers to leave the first feature, the filler feature and the second feature spaced apart from each other;
- and
- etching the at least one device layer using the first feature, the filler feature and the second feature as a mask.
A method of making a pillar shaped nonvolatile memory device array, comprising:
- forming a plurality of bottom electrodes over a substrate;
- forming at least one semiconductor device layer over the plurality of bottom electrodes;
- forming a plurality of spaced apart features over the at least one semiconductor device layer;
- forming sidewall spacers on the plurality of spaced apart features;
- forming a filler film over and between the plurality of spaced apart features;
- planarizing the filler film to expose upper portions of the plurality of spaced apart features and upper portions of the sidewall spacers to leave a plurality of filler features located between the sidewall spacers;
- selectively removing the sidewall spacers to leave the plurality of spaced apart features and the plurality of filler features spaced apart from each other;
- etching the at least one semiconductor device layer using the plurality of spaced apart features and the plurality of filler features as a mask to form a plurality of pillar shaped diode containing nonvolatile memory cells;
- and
- forming a plurality of upper electrodes contacting the plurality of nonvolatile memory cells.
Dependencies are inferred from the claim text.