Semiconductor Device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsRyo Arasawa, Tomoyuki Iwabuchi
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Abstract
An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate 100 of an active matrix EL panel includes a vapor deposition region 101 having a film formed by a vapor deposition method. In the vapor deposition region 101, a pixel region 102 is provided. A TEG 109 is provided in the vapor deposition region 101 having a film formed in a vapor deposition step and outside of the pixel region 102. A measurement terminal portion 110 for measuring the TEG 109 is provided outside of a sealing region 103.
Claims17
1-9. (canceled)
A display device comprising:
- a substrate including a first vapor deposition region and a second vapor deposition region inside the first vapor deposition region, wherein the second vapor deposition region has at least four corners;
- a pixel including a first thin film transistor, and provided in the second vapor deposition region;
- and
- at least four test element groups each including a second thin film transistor, each of the at least four test element groups provided adjacent to each of the at least four corners, and provided outside the second vapor deposition region and inside the first vapor deposition region.
A display device comprising:
- a substrate including a first vapor deposition region and a second vapor deposition region inside the first vapor deposition region, wherein the second vapor deposition region has at least four corners;
- a pixel including a first thin film transistor, and provided in the second vapor deposition region;
- at least four test element groups each including a second thin film transistor, each of the at least four test element groups provided adjacent to each of the at least four corners, and provided outside the second vapor deposition region and inside the first vapor deposition region;
- and
- an electro-luminescence layer formed over the first thin film transistor and the second thin film transistor.
A display device comprising:
- a substrate including a first vapor deposition region and a second vapor deposition region inside the first vapor deposition region, wherein the second vapor deposition region has at least four corners;
- a pixel including a first thin film transistor, and provided in the second vapor deposition region;
- at least four test element groups each including a second thin film transistor, each of the at least four test element groups provided adjacent to each of the at least four corners, and provided outside the second vapor deposition region and inside the first vapor deposition region;
- and
- a driver circuit including a third thin film transistor formed over the substrate.
A display device comprising:
- a substrate including a first vapor deposition region and a second vapor deposition region inside the first vapor deposition region, wherein the second vapor deposition region has at least four corners;
- a pixel including a first thin film transistor, and provided in the second vapor deposition region;
- at least four test element groups each including a second thin film transistor, each of the at least four test element groups provided adjacent to each of the at least four corners, and provided outside the second vapor deposition region and inside the first vapor deposition region;
- an electro-luminescence layer formed over the first thin film transistor and the second thin film transistor;
- and
- a driver circuit including a third thin film transistor formed over the substrate.
Dependencies are inferred from the claim text.