Semiconductor Device and Method for Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorSung Jin KIM
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Abstract
Disclosed are a semiconductor device and a method for manufacturing the same. The method includes forming a gate layer on a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; forming a second oxide layer on the first oxide layer; exposing the first oxide layer by removing the second oxide layer other than on side surfaces of the gate layer by etching using a photoresist as a mask; and forming junctions in source/drain regions by implanting a high concentration of N-type ions and/or a high concentration of P-type ions using the second oxide layer as a sidewall mask.
Claims20
A method for manufacturing a semiconductor device comprising:
- forming a gate layer on a semiconductor substrate;
- forming a first oxide layer on the semiconductor substrate;
- forming a second oxide layer on the first oxide layer;
- exposing the first oxide layer by removing the second oxide layer in regions other than side surfaces of the first oxide layer by etching using a patterned photoresist as a mask;
- and
- forming junctions in source/drain regions by implanting a high concentration of N-type ions and/or a high concentration of P-type ions using the second oxide layer as a sidewall mask.
A semiconductor device comprising:
- a gate layer on a semiconductor layer;
- an oxide layer surrounding upper and side surfaces of the gate layer;
- and
- a spacer on side surfaces of the oxide layer.
Dependencies are inferred from the claim text.