Semiconductor memory device

A semiconductor memory device comprising:

• bit lines extending in a first direction;
• word lines extending in a second direction crossing the first direction;
• semiconductor layers arranged to correspond to crosspoints of the bit lines and the word lines;
• bit line contacts connecting between a first surface region and the bit lines, the first surface region being a part of a surface region of the semiconductor layers directed to the word lines and the bit lines;
• and
• a word-line insulating film formed on a second surface region adjacent to the first surface region, the second surface region being a part of out of the surface region of the semiconductor layer, the word-line insulating film electrically insulating the semiconductor layer and the word line, wherein
• the semiconductor layer, the word line and the word-line insulating film form a capacitor, and
• when a potential difference is given between the word line and the bit line, the word-line insulating film is broken in order to store data.