Process for removing ion-implanted photoresist
AssigneeTexas Instruments Incorporated
InventorsSrinivasa Raghavan, Murlidhar Bashyam, Mike Tucker, Kalyan Cherukuri
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Abstract
A method of manufacturing an IC that comprises fabricating a semiconductor device. Fabricating the device includes depositing a photoresist layer on a substrate surface and implanting one or more dopant species through openings in the photoresist layer into the substrate, and, into the photoresist layer, thereby forming an implanted photoresist layer. Fabricating the device also includes removing the implanted photoresist layer. Removing the implanted photoresist layer includes exposing the implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone. The mixture is at a temperature of at least about 130°.
Claims20
A method of manufacturing an integrated circuit, comprising:
- fabricating a semiconductor device, including:
- depositing a photoresist layer on a substrate surface;
- implanting one or more dopant species through openings in said photoresist layer into said substrate, and into said photoresist layer, thereby forming an implanted photoresist layer;
- and
- removing said implanted photoresist layer, including exposing said implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone wherein said mixture is at a temperature of at least about 130° C.
A method of manufacturing an integrated circuit, comprising:
- fabricating a semiconductor device, including:
- forming a gate structure on a substrate;
- depositing a photoresist layer on said substrate, including said gate structure;
- forming an opening in said photoresist layer so as to expose said gate structure and portions of said substrate in the vicinity of said gate structure;
- implanting dopant species through said openings into said substrate, and, into said photoresist layer, thereby forming an implanted photoresist layer;
- and
- removing said implanted photoresist layer, including exposing said implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone wherein said mixture is at a temperature of at least about 130° C.
An integrated circuit, comprising:
- one or more semiconductor devices, each of said semiconductor devices including:
- a gate structure on a substrate;
- one or more doped regions formed adjacent to said gate structure, wherein said at least one of said doped regions are formed by a process that includes:
- depositing a photoresist layer on said substrate;
- implanting one or more dopant species through openings in said photoresist layer into said substrate, and into said photoresist layer, thereby forming an implanted photoresist layer;
- and
- removing said implanted photoresist layer, including exposing said implanted photoresist layer to a mixture that includes sulfuric acid, hydrogen peroxide and ozone wherein said mixture is at a temperature of at least about 130° C.
Dependencies are inferred from the claim text.