US 2009/0023278 A1 · METHOD OF MANUFACTURING FLASH MEMORY DEVICE

Abstract

A method of manufacturing a flash memory device that may include forming a dielectric film pattern on a semiconductor substrate; etching the semiconductor substrate using the dielectric film pattern as a mask to form a trench; forming a first dielectric film on the semiconductor substrate including the trench; performing a wet etching process on the semiconductor substrate formed with the first dielectric film; forming a second dielectric film on the semiconductor substrate; performing a planarization process on the first and second dielectric films; and removing the dielectric film pattern. Therefore, a generation of void may be prevented when forming a device isolation film and also when forming an interlayer dielectric film.

Claims20

Dependent claims

A method comprising:

forming a dielectric film pattern on a semiconductor substrate;
and then
forming a trench by etching the semiconductor substrate using the dielectric film pattern as a mask;
and then
forming a first dielectric film on the semiconductor substrate including the trench;
and then
performing a wet etching process on the semiconductor substrate formed with the first dielectric film;
and then
forming a second dielectric film on the semiconductor substrate;
and then
performing a planarization process on the first and second dielectric films;
and then
removing the dielectric film pattern.

10 more elements

Dependencies are inferred from the claim text.

Method of manufacturing flash memory device

Life of this patent

Method of manufacturing flash memory device

Life of this patent

Abstract

Claims20