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US 2009/0023080 A1Published application
Mask and manufacturing method thereof
OwnerYeon-Ah Shiminventor
Life of this patent
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Abstract
A mask according to embodiments includes a substrate and a phase delay material layer formed over the substrate. At least one mask pattern including a hole pattern may be formed on the phase delay material layer, the hole pattern allowing light to pass through the mask pattern. Assist patterns compensate for constructive interference of the light occurring between the mask patterns. Embodiments may prevent sidelobes from occurring by inserting an assist pattern into a mask, so that defects in semiconductor devices can be prevented.
Claims20
An apparatus comprising:
- a substrate;
- a phase delay material layer formed over the substrate;
- at least one mask pattern including a hole pattern on the phase delay material layer, the hole pattern allowing light to pass through the mask pattern;
- and
- assist patterns compensating for constructive interference of the light occurring between the mask patterns.
2 more elements
A method comprising:
- preparing a base substrate;
- forming a phase delay material layer over the base substrate;
- forming at least one mask pattern including a first hole pattern, which allows light to pass through the hole pattern, by patterning the phase delay material layer;
- and
- forming at least one assist pattern including a second hole pattern located between the mask patterns, thereby compensating for constructive interference of the light between portions of the first hole pattern.
2 more elements
An apparatus comprising:
- at least one hole pattern formed on a light phase delay part between the light transmitting parts in a phase shift mask, the hole pattern causing destructive interference of a portion of the light passing through the light transmitting parts.
Dependencies are inferred from the claim text.