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US 2009/0020755 A1Published application
Test structure of a semiconductor device and semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSe-Young CHUNG, Ji-Hae KIM
Life of this patent
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Abstract
A test structure includes a transistor, a dummy transistor and a pad unit. The transistor is formed on a first active region of a substrate. The dummy transistor is formed on a second active region of the substrate and electrically connected to the transistor. The pad unit is electrically connected to the transistor. Plasma damage to the transistor is reduced due to the presence of dummy transistor.
Claims15
A test structure of a semiconductor device, comprising:
- a transistor on a first active region of a substrate;
- a dummy transistor on a second active region of the substrate, the dummy transistor electrically connected to the transistor;
- and
- a pad unit electrically connected to the transistor.
1 more element
A semiconductor device comprising:
- a transistor on a first active region of a substrate;
- and
- a dummy transistor on a second active region, the dummy transistor electrically connected to the transistor.
Dependencies are inferred from the claim text.