Semiconductor Device and Manufacturing Method of the Same
AssigneeDongbu HiTek Co., Ltd.
InventorJi Houn Jung
Life of this patent
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Abstract
Disclosed is a semiconductor device. The semiconductor device includes a first gate formed in a trench of a semiconductor substrate, a first gate oxide layer on the semiconductor substrate including the first gate, a first epitaxial layer on the first gate oxide layer, first source and drain regions in the first epitaxial layer at sides of the first gate, an insulating layer on the first epitaxial layer, a second epitaxial layer on the insulating layer, a second gate oxide layer on the second epitaxial layer, a second gate on the second gate oxide layer, and second source and drain regions in the second epitaxial layer below sides of the second gate.
Claims17
A semiconductor device comprising:
- a first gate formed in a trench of a semiconductor substrate;
- a first gate oxide layer on the semiconductor substrate including the first gate;
- a first epitaxial layer on the first gate oxide layer;
- first source and drain regions in the first epitaxial layer at sides of the first gate;
- an insulating layer on the first epitaxial layer;
- a second epitaxial layer on the insulating layer;
- a second gate oxide layer on the second epitaxial layer;
- a second gate on the second gate oxide layer;
- and
- second source and drain regions in the second epitaxial layer below sides of the second gate.
A method of manufacturing a semiconductor device, comprising:
- forming a trench in a semiconductor substrate;
- forming a first gate in the trench;
- forming a first gate oxide layer on the semiconductor substrate including the first gate;
- forming a first epitaxial layer on the first gate oxide layer;
- forming first source and drain regions in the first epitaxial layer at sides of the first gate;
- forming an insulating layer on the first epitaxial layer;
- forming a second epitaxial layer on the insulating layer;
- forming a second gate oxide layer on the second epitaxial layer;
- forming a second gate on the second gate oxide layer;
- and
- forming second source and drain regions in the second epitaxial layer at sides of the second gate.
Dependencies are inferred from the claim text.