Occupancy Based on Pattern Generation Method For Maskless Lithography

Abstract

An occupancy based pattern generation method for a maskless lithography system using micromirrors is disclosed. The present invention includes the steps of recognizing a pattern upon the substrate through the extraction of the pattern boundary and the construction of the pattern region and recognizing the pattern upon the micromirror through the confirmation of the micromirror dependent lithographic pattern region, the extraction of the micromirror dependent pattern based on the occupancy, and the construction of the stream of binary patterns containing binary reflection information for the micromirrors in accordance with the substrate scrolling.

Dependencies are inferred from the claim text.