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US 2008/0305635 A1Published application
Method for fabricating a pattern
AssigneeMacronix International Co., Ltd.
InventorsShih-Chang Tsai, Chun-Hung Lee, Ming-Cheng Deng, Ta-Hung Yang
Life of this patent
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Abstract
A method for fabricating a patter is provided as followed. First, a material layer is provided, whereon a patterned hard mask layer is formed. A spacer is deposited on the sidewalls of the patterned hard mask layer. Then, the patterned hard mask layer is removed, and an opening is formed between the adjacent spacers. Afterwards, a portion of the material layer is removed to form a patterned material layer by using the spacer as mask.
Claims24
A method for fabricating a pattern, comprising:
- providing a material layer;
- forming a patterned hard mask layer on the material layer;
- forming a spacer on the sidewalls of the patterned hard mask layer;
- removing the patterned hard mask layer to form an opening between the adjacent spacers;
- and
- removing a portion of the material layer to form a patterned material layer by using the spacer as mask.
3 more elements
A method for fabricating a pattern, comprising:
- providing a material layer;
- forming a patterned hard mask layer on the material layer, wherein one spacing of the patterned hard mask layer triples one width of the patterned hard mask layer;
- forming a spacer on the sidewalls of the patterned hard mask layer and the width of the bottom of the spacer is approximately equal to one width of the patterned hard mask layer;
- removing the patterned hard mask layer to form an opening between the adjacent spacers;
- and
- removing a portion of the material layer to form a patterned material layer by using the spacer as mask and one spacing of the patterned material layer is approximately equal to one width of the patterned material layer.
3 more elements
Dependencies are inferred from the claim text.