Aperture mask, manufacturing method thereof, charge beam lithography apparatus, and charge beam lithography method

An aperture mask for charged beam lithography, the aperture mask comprising:

• a mask substrate having an insulating film, and provided with an aperture which penetrates the insulating film;
• and
• a conductive layer which coats an exposed surface of the insulating film exposed to a side wall surface of the aperture.

A method of manufacturing an aperture mask for charged beam lithography, the method comprising:

• forming, in a mask substrate having a first semiconductor layer, an insulating film formed on the first semiconductor layer, and a second semiconductor layer formed on the insulating film, an aperture which penetrates the first semiconductor layer, the insulating film, and the second semiconductor layer;
• and
• forming a conductive layer which coats a surface of the mask substrate and a side wall surface of the aperture formed in the mask substrate, and which coats an exposed surface of the insulating film exposed to the side wall surface of the aperture.

A method of manufacturing an aperture mask for charged beam lithography, the method comprising:

• forming, in a mask substrate having an insulating film, an aperture which penetrates the insulating film;
• and
• forming a conductive layer which coats an exposed surface of the insulating film exposed to a side wall surface of the aperture.