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US 2008/0303098 A1Published application
Semiconductor Device Manufactured Using a Method to Reduce CMP Damage to Low-K Dielectric Material
AssigneeTexas Instruments Incorporated
InventorsYaojian Leng, Robert D. Slater, Nathan J. Kruse
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Abstract
In one aspect, there is provided a method of manufacturing a semiconductor device. The method comprises depositing a barrier layer over a low-k dielectric layer located over a semiconductor substrate over which a metal layer is deposited. A chemical mechanical polish process is used to remove a portion of the metal layer and the barrier layer and a dry etch is used to remove a remaining portion of the barrier layer.
Claims19
A method of manufacturing a semiconductor device, comprising:
- depositing a barrier layer over a low-k dielectric layer located over a semiconductor substrate;
- depositing a metal layer over said barrier layer;
- using a chemical mechanical process to remove a portion of said metal layer and said barrier layer;
- and
- using a dry etch to remove a remaining portion of said barrier layer.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- placing a low-k dielectric layer over a semiconductor substrate;
- depositing a hard mask layer over said low-k dielectric layer;
- forming a trench in said low-k dielectric layer;
- depositing a metal barrier layer over said low-k dielectric layer and within said trench;
- depositing a metal layer over said barrier layer and within said trench;
- using a chemical mechanical process to remove a portion of said metal layer and at least a portion of said barrier layer or said hard mask layer;
- and
- using a dry etch to remove another portion of said metal layer, and remove a remaining portion of said barrier layer or said hard mask layer adjacent to said trench.
5 more elements
A semiconductor device, comprising:
- a low-k dielectric layer located over a semiconductor substrate;
- a hard mask layer located over said low-k dielectric layer;
- and
- a trench located in said low-k dielectric layer and having a metal barrier layer and a metal layer located therein, wherein a portion of said metal layer and at least a portion of said metal barrier layer or said hard mask layer having been removed using a wet chemical mechanical process and wherein another portion of said metal layer and a remaining portion of said metal barrier layer or said hard mask layer adjacent to said trench having been removed using a dry etch.
1 more element
Dependencies are inferred from the claim text.