Semiconductor Manufacture Employing Isopropanol Drying

A wet chemical process for processing semiconductor substrates having a surface, the process comprising:

• treating the surface of the substrate with a wet chemical;
• and
• removing the wet chemical from the surface of the substrate by contact with a drying vapor comprising isopropanol, wherein the drying vapor is formed from liquid isopropanol, and
• wherein the liquid isopropanol has been shipped in transport using refrigeration such that the liquid isopropanol is maintained at a temperature in the range of 80° F. and below during the transport.

A wet chemical process for producing electronic devices manufactured from semiconductor substrates using comprising:

• treating a surface of the substrate with a wet chemical;
• rinsing the wet chemical from the surface with water;
• removing the water from the surface by contact with a drying vapor comprising isopropanol, wherein the drying vapor is formed from liquid isopropanol;
• and
• employing liquid isopropanol that has been maintained at a temperature in the range of from 55° F. to 80° F. from the point of manufacture of the liquid isopropanol until formation of drying vapor therefrom.

A wet chemical process for producing electronic devices comprising:

• treating a semiconductor substrate with a wet chemical;
• forming a drying vapor comprising isopropanol from liquid isopropanol, wherein the liquid isopropanol is substantially free from peroxide;
• and
• removing the wet chemical from the semiconductor substrate by contact with the drying vapor.