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US 2008/0286907 A1Published application
Semiconductor layer for thin film transistors
AssigneeXerox Corporation
InventorsYuning Li, Beng S. Ong
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Abstract
A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying the solution to a substrate; and heating the solution to form a semiconductor layer on the substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio.
Claims21
A method of making a zinc oxide semiconductor layer for a thin film transistor, comprising:
- providing a solution comprising a zinc salt and a complexing agent;
- contacting a substrate with the solution;
- and
- heating the solution to form a zinc oxide semiconductor layer on the substrate.
1 more element
Dependencies are inferred from the claim text.