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US 2008/0277665 A1Published application
Semiconductor device, nonvolatile memory device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsCha-Deok DONG, Il-Seok Seo
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Abstract
A semiconductor device includes a conductive layer including a first and a second polysilicon layers having different grain boundaries, wherein a portion or an entire region of the first polysilicon layer is crystallized and wherein a grain boundary in a crystallized region is bigger than the grain boundary of the second polysilicon layer.
Claims23
A semiconductor device comprising:
- a conductive layer including first and second polysilicon layers having different grain sizes, wherein the first polysilicon layer is crystallized to increase its grain size.
A method of forming a conductive layer in a semiconductor device, the method comprising:
- forming a first polysilicon layer over a substrate, the first polysilicon being undoped;
- crystallizing the undoped first polysilicon layer to grow a grain size of the first polysilicon layer;
- and
- forming a second polysilicon layer over the first polysilicon layer, the second polysilicon layer being doped.
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A nonvolatile memory device comprising:
- a substrate;
- a floating gate formed over the substrate and including first and second polysilicon layers, the first polysilicon layer having a grain size that is bigger than that of the second polysilicon layer,
- wherein the first polysilicon layer is exposed to heat after the first polysilicon layer is formed over the substrate.
A method of forming a floating gate in a nonvolatile memory device, the method comprising:
- forming an undoped polysilicon layer over a substrate;
- crystallizing the undoped polysilicon layer to increase a grain size of the undoped polysilicon layer;
- and
- forming a doped polysilicon layer over the undoped polysilicon layer after the crystallizing step, so that dopants from the doped polysilicon is diffused into the undoped polysilicon layer.
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Dependencies are inferred from the claim text.