Thin film transistor and method of manufacturing the same

Abstract

Provided is a thin film transistor that includes a substrate on which an insulating layer is formed, a gate formed on a region of the insulating layer, a gate insulating layer formed on the insulating layer and the gate, a channel region formed on the gate insulating layer on a region corresponding to the location of the gate, a source and a drain respectively formed by contacting either side of the channel region; and a passivation layer formed of a compound made of a group II element and a halogen element on the channel region.

Dependencies are inferred from the claim text.