Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• an interlayer insulating film formed on a substrate;
• a wiring formed in the interlayer insulating film in a chip region of the substrate;
• a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region;
• and
• a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein, wherein
• the first protective film is thinned in a region located outside the seal ring when viewed from the chip region, and the thinned portion of the first protective film is exposed.

A manufacturing method of a semiconductor device, comprising the steps of:

• (a) forming an interlayer insulating film on a substrate;
• (b) forming a wiring in the interlayer insulating film in a chip region of the substrate and forming a seal ring in the interlayer insulating film in a periphery of the chip region so that the seal ring continuously surrounds the chip region;
• (c) forming a first protective film on the interlayer insulating film having the wiring and the seal ring formed therein;
• and
• (d) forming a first opening in the first protective film in a region located outside the seal ring when viewed from the chip region so that the interlayer insulating film is exposed in the first opening.