Electromigration Aggravated Electrical Fuse Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Yao Ker, Shine Chung
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Yao Ker, Shine Chung
Estimating the term…
A fuse structure with aggravated electromigration effect is disclosed, which comprises an anode area overlaying a first plurality of contacts that are coupled to a positively high voltage during a programming of the fuse structure, a cathode area overlaying a second plurality of contacts that are coupled to a complementary low voltage during a programming of the fuse structure, and a fuse link area having a first and second end, wherein the first end contacts the anode area at a predetermined distance to the nearest of the first plurality of contacts, and the second end contacts the cathode area at the predetermined distance to the nearest of the second plurality of contacts, wherein the cathode area is smaller than the anode area for the aggravating electromigration effect.
A fuse structure for being used in electromigration programming modes, the fuse structure comprising:
A fuse structure for being used in electromigration (EM) programming modes, the fuse structure comprising:
A fuse structure for being used in electromigration programming modes, the fuse structure comprising:
Dependencies are inferred from the claim text.