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US 2008/0258176 A1Published application
Antimonide-based compound semiconductor with titanium tungsten stack
AssigneeNorthrop Grumman Systems Corporation
InventorsYeong-Chang Chou, Jay Crawford, Jane Lee, Jeffrey Ming-Jer Yang, John Bradley Boos, Nicolas Alexandrou Papanicolaou
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Abstract
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
Claims20
An apparatus, comprising:
- an antimonide-based compound semiconductor (ABCS) stack;
- an upper barrier layer of indium, aluminum, and arsenic formed on the ABCS stack;
- a gate stack formed on the upper barrier layer;
- wherein the gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
1 more element
A high electron mobility transistor, comprising:
- an antimonide-based compound semiconductor (ABCS) stack;
- an upper barrier layer formed on the ABCS stack;
- a gate stack formed on the upper barrier layer;
- wherein the gate stack comprises a base layer formed on the upper barrier layer, a gate barrier layer formed on the base layer, and a contact layer formed on the gate barrier layer;
- wherein the base layer provides a thermally stable contact with the upper barrier layer;
- wherein the gate barrier layer prevents the contact layer from diffusing into the ABCS stack.
3 more elements
A method, comprising the steps of:
- forming an upper barrier layer of indium, aluminum, and arsenic on an antimonide-based compound semiconductor (ABCS) stack;
- forming a base layer of titanium and tungsten on the upper barrier layer to prevent diffusion of a contact layer into the ABCS stack;
- forming the contact layer on the base layer with layers of titanium, platinum, and gold.
Dependencies are inferred from the claim text.