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US 2008/0187843 A1Published application
Photomask and method for manufacturing a semiconductor device using the photomask
AssigneeFujitsu Limited
InventorNaoyuki ISHIWATA
Life of this patent
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Abstract
A photomask including a chip area and a shaded area with a first transmitting pattern located in the chip area forming a ring shape with a missing part, and a second transmitting pattern located in the shaded area having a shape corresponding to the missing part of the first transmitting pattern.
Claims20
A photomask comprising:
- a chip area with a semiconductor device pattern formed thereon;
- a shaded area surrounding the chip area;
- a first transmitting pattern located in the chip area having a ring shape with a missing part;
- and
- a second transmitting pattern located in the shaded area having a shape corresponding to the missing part.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- a first exposing step using a photomask in a first area of a semiconductor substrate;
- and
- a second exposing step using the photomask in a second area adjacent to the first area of the semiconductor substrate;
- wherein the photomask comprises a first transmitting pattern having a ring shape with a missing part, and a second transmitting pattern having a shape corresponding to the missing part of the first transmitting pattern;
- and
- a closed loop pattern is exposed by the first exposing step and the second exposing step on the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.