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US 2008/0185723 A1Published application
Semiconductor device
AssigneeElpida Memory, Inc.
InventorYoshikazu Moriwaki
Life of this patent
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Abstract
An antifuse includes a first conductor pattern, a sidewall insulating film formed on a side of the first conductor pattern, and a second conductor pattern formed so that the sidewall insulating film is interposed between the first and second conductor patterns and so as to face the side of the first conductor pattern. The antifuse utilizes the sidewall insulating film as a capacitor insulating film of a capacitor.
Claims10
A semiconductor device having an antifuse, wherein the antifuse comprises:
- a first conductor pattern;
- a sidewall insulating film formed on a side of the first conductor pattern;
- and
- a second conductor pattern formed so that the sidewall insulating film is interposed between the first and second conductor patterns and so as to face the side of the first conductor pattern.
1 more element
An antifuse, comprising:
- a first conductor pattern;
- a sidewall insulating film formed on a side of the first conductor pattern;
- and
- a second conductor pattern formed so that the sidewall insulating film is interposed between the first and second conductor patterns and so as to face the side of the first conductor pattern.
1 more element
Dependencies are inferred from the claim text.