Semiconductor device
AssigneeNEC Electronics Corporation
InventorYasutaka NAKASHIBA
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Abstract
Disclosed is a semiconductor device which has a circuit-forming region. The semiconductor device has a semiconductor substrate, a plurality of insulating interlayer films, a guard ring, and a first MIM capacitor. The insulating interlayer films, which are stacked one upon another, are provided over the semiconductor substrate. The guard ring is formed in the plurality of insulating interlayer films and surrounds the circuit-forming region. The guard ring is separated from an insulating interlayer film including a topmost interconnect. The MIM capacitor is provided between the guard ring and the insulating interlayer film including the topmost interconnect.
Claims12
A semiconductor device having a circuit-forming region, comprising:
- a semiconductor substrate;
- a plurality of insulating interlayer films provided over said semiconductor substrate and being stacked one upon another, said plurality of insulating interlayer films including a first insulating interlayer film which has a topmost interconnect;
- a guard ring formed in said plurality of insulating interlayer films and surrounding said circuit-forming region, said guard ring being separated from said first insulating interlayer film;
- and
- a first MIM capacitor formed between said guard ring and said first insulating interlayer film.
Dependencies are inferred from the claim text.