Integrated Circuit Comprising a Capacitor with Metal Electrodes and Process for Fabricating Such a Capacitor
AssigneesSTMicroelectronics S.r.l., Koninklijke Philips Electronics N.V.
InventorsAomar Halimaoui, Rebha El Farhane, Benoit Froment
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Abstract
An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
Claims16
1-9. (canceled)
An integrated circuit comprising at least one capacitor with a plurality of metal electrodes, wherein at least one electrode of the plurality of electrodes of the capacitor is formed from at least surface-silicided hemispherical grain silicon or silicon alloy.
A process for fabricating a capacitor within an integrated circuit, comprising:
- the production of a first electrode, of a dielectric and of a second electrode, wherein the production of the first electrode comprises the formation of a layer of hemispherical grain silicon or silicon alloy and the at least surface silicidization of the layer.
An electronic device, comprising:
- a plurality of integrated circuits, each of the integrated circuits comprising:
- at least one capacitor with a plurality of metal electrodes, wherein
- first and second electrodes of the plurality of electrodes of the capacitor are formed from at least surface-silicided hemispherical grain silicon or silicon alloy.
Dependencies are inferred from the claim text.