Semiconductor device and method of manufacturing the same
AssigneeSeiko Instruments Inc.
InventorYuichiro Kitajima
Life of this patent
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Abstract
A fuse element is laminated on a resistor and the resistor is formed in a concave shape below a region in which cutting of the fuse element is carried out with a laser. Accordingly, there can be provided a semiconductor device which occupies a small area, causes no damage on the resistor in the cutting of the fuse element, has a small contact resistance occurred between elements, and has stable characteristics, and a method of manufacturing the same.
Claims12
A semiconductor device, comprising:
- a semiconductor substrate having a main surface;
- a trench region formed in the main surface of the semiconductor substrate;
- an insulating layer covering an inner surface of the trench region and the main surface of the semiconductor substrate;
- a resistor formed on the insulating layer so as to extend from within the trench region onto the main surface of the semiconductor substrate;
- a first oxide film embedded in the trench region so as to be flush with the main surface of the semiconductor substrate;
- a fuse element formed on the first oxide film so as to overlie the resistor;
- a second oxide film formed so as to cover the fuse element, the first oxide film, and the resistor;
- and
- a interconnect layer formed on the second oxide film to be electrically connected with the resistor and the fuse element via a plug.
A method of manufacturing a semiconductor device having resistors and fuse elements and including a bleeder resistance circuit which can, by cutting one of the fuse elements connected in parallel with one of the resistors, adjust voltage output divided by the resistors, the method comprising the steps of:
- forming a trench in a semiconductor substrate;
- forming a field insulating film on the semiconductor substrate having the trench formed therein;
- forming a first polycrystalline silicon film on the field insulating film;
- patterning the first polycrystalline silicon film;
- depositing and planarizing using an etch-back method a first oxide film;
- forming a second polycrystalline silicon film;
- patterning the second polycrystalline silicon film;
- forming an interlayer film on the second polycrystalline silicon film;
- forming a plug in a region where the first polycrystalline silicon film and the second polycrystalline silicon film are laminated so that the plug pierces the interlayer film and the second polycrystalline silicon film to reach the first polycrystalline silicon film;
- forming thereon a conductor as a interconnect layer;
- forming thereon a passivation film;
- forming thereon a polyimide film;
- and
- patterning the passivation film and the polyimide film.
Dependencies are inferred from the claim text.