Magnetic random access memory and method of manufacturing the same

A magnetic random access memory comprising:

• an interlayer dielectric film having a contact hole;
• a contact formed in the contact hole;
• a first barrier metal film formed on an upper surface of the contact and buried in the contact hole;
• a magnetoresistive effect element having one terminal connected to the first barrier metal film, and including a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer taking one of a parallel state and an antiparallel state in accordance with a direction of an electric current flowing between the fixed layer and the recording layer;
• a wiring connected to the other terminal of the magnetoresistive effect element;
• and
• a transistor connected to the magnetoresistive effect element via the contact and the first barrier metal film.