SOI type semiconductor device having a protection circuit
AssigneeOki Electric Industry Co., Ltd.
InventorMasao Okihara
Life of this patent
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Abstract
An SOI type semiconductor device having a silicon substrate and a buried oxide layer formed on the silicon substrate includes an internal circuit formed in a first region having at least one FD type transistor having a SOI structure, the internal circuit performing a function of the semiconductor device and a protection circuit formed in a second region having at least one PD type transistor having a SOI structure, the protection circuit protecting the internal circuit from electro static damage.
Claims13
A Silicon-On-Insulator type semiconductor device having a silicon substrate and a buried oxide layer formed on the silicon substrate, comprising:
- an internal circuit formed in a first region having at least one Fully-Depletion type transistor having a Silicon-On-Insulator structure, the internal circuit performing a function of the semiconductor device;
- and
- a protection circuit formed in a second region having at least one Partially-Depletion type transistor having the Silicon-On-Insulator structure, the protection circuit protecting the internal circuit from electro static damage.
A Silicon-On-Insulator type semiconductor device having a silicon substrate and a buried oxide layer formed on the silicon substrate, comprising:
- A first conductive line connected to a first power supply voltage;
- a second conductive line connected to a second power supply voltage;
- a substrate line electrically connected to the silicon substrate;
- an internal circuit formed in a first region having at least one transistor having a Silicon-On-Insulator structure, the internal circuit performing a function of the semiconductor device;
- and
- a protection circuit formed in a second region having at least one transistor having the Silicon-On-Insulator structure, the protection circuit protecting the internal circuit from electro static damage, and the gate and the source of the transistor being commonly connected to the substrate line.
Dependencies are inferred from the claim text.