Structure and method for monitoring and characterizing pattern density dependence on thermal absorption in a semiconductor manufacturing process

A semiconductor wafer comprising:

• a plurality of dies, at least one die having one or more thermal absorption detection structures thereon for characterizing and monitoring the dependence of pattern density of the at least one die on thermal absorption of the at least one die;
• each of the one or more thermal absorption detection structures being a silicon substrate having a first oxide layer disposed on the upper surface of the silicon substrate;
• and
• a test structure (108) disposed on the first oxide layer wherein the test structure is located substantially in the center of the silicon substrate.

A method for monitoring and characterizing pattern density dependence on thermal absorption in a semiconductor manufacturing process, comprising the steps of:

• creating a test wafer having at least one die incorporating at least one thermal absorption detection structure, the at least one thermal absorption detection structure including a silicon substrate having a first oxide layer disposed on the upper surface thereof and a test structure disposed on the first oxide layer wherein the test structure is located substantially in the center of the silicon substrate;
• subjecting the wafer to a rapid thermal process;
• measuring the resistance of the at least one testing structure;
• and
• tabulating the measured resistance of the at least one test structure to a thermal absorption value of the at least one die.