Etching method and etching equipment
AssigneeHitachi High-Technologies Corporation
InventorsKazuo TAKATA, Yutaka Kudou, Satoshi Tani
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Abstract
The invention provides an etching method for realizing trench etching without causing any damages to the side walls of the trench while maintaining a high-etching rate. The plasma etching method relates to forming a groove or a hole by forming a silicon trench to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer via a mixed gas plasma containing a mixed gas of SF6 and O2 or a mixed gas of SF6, O2 and SiF4 and having added thereto a gas containing hydrogen within the range of 5 to 16% (percent concentration) of the total gas flow rate of the mixed gas.
Claims5
An etching method for forming a trench (a groove or a hole) to a silicon substrate or a silicon substrate having a silicon oxide dielectric layer, the etching performed via a plasma generated by a mixed gas formed by adding a gas containing hydrogen to a mixed gas composed of SF6, O2 and SiF4, wherein the amount of added gas containing hydrogen is within a range of 5 to 16% (percent concentration) of the total gas flow rate of said mixed gas composed of SF6, O2 and SiF4, and wherein a temperature of a sample stage for holding the silicon substrate or the silicon substrate having the silicon oxide layer is controlled to 0° C. or lower.
Dependencies are inferred from the claim text.