Method of polishing a layer and method of manufacturing a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-Yong Kim, Chang-Ki Hong, Bo-Un Yoon, Byoung-Ho Kwon
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Abstract
In a method of chemically and mechanically polishing a layer, a substrate on which the layer having stepped portions is formed is prepared. The layer is primarily chemically and mechanically polished at a temperature of about 30° C. to about 80° C. to remove the stepped portions of the layer. The layer is secondarily chemically and mechanically polished without the stepped portions at a temperature of about 5° C. to about 25° C. to form a flat layer having a desired thickness. Thus, the stepped portions may be rapidly removed in an initial period so that the method may have an improved throughput.
Claims14
A method of polishing a layer having high planarity, comprising:
- preparing a substrate on which the layer having stepped portions is formed;
- primarily chemically and mechanically polishing the layer at a temperature of about 30° C. to about 80° C. to remove the stepped portions of the layer;
- and
- secondarily chemically and mechanically polishing the layer without the stepped portions at a temperature of about 5° C. to about 25° C. to form a layer pattern having a desired thickness.
A method of manufacturing a semiconductor device, comprising:
- preparing a substrate on which structures are formed;
- forming a silicon oxide layer on the substrate to cover the structures, the silicon oxide layer having stepped portions;
- primarily chemically and mechanically polishing the silicon oxide layer using a first slurry at a temperature of about 30° C. to about 80° C. to remove the stepped portions of the silicon oxide layer;
- and
- secondarily chemically and mechanically polishing the silicon oxide layer without the stepped portions using a second slurry at a temperature of about 5° C. to about 25° C. to form a layer pattern having a flat surface.
Dependencies are inferred from the claim text.