Method and resulting structure for fabricating test key structures in dram structures
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorYoung Woo Kwon
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AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorYoung Woo Kwon
Estimating the term…
A method for fabricating test structures on a wafer for integrated circuits. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method includes forming a plurality of integrated circuit chip structures on the semiconductor substrate and forming a plurality of MOS devices on a scribe line formed between a first group and a second group of integrated circuit chip structures concurrently using one or more similar processes during forming the plurality of integrated circuit chip structures. The method includes forming a first contact structure and a second contact structure. The first contact structure is coupled to a first MOS device in the plurality of MOS devices and the second contact structure is coupled to an Nth MOS device in the plurality of MOS devices, where N is an integer greater than 1.
1-10. (canceled)
A method for fabricating test structures on a wafer for integrated circuits, the method comprising:
Dependencies are inferred from the claim text.