Back to results
US 2008/0157261 A1Published application
Patterned silicon-on-insulator layers and methods for forming the same
AssigneeInternational Business Machines Corporation
InventorsRoger Allen Booth,, Louis Lu-Chen Hsu, Jack A. Mandelman, William R. Tonti
Life of this patent
Estimating the term…
Abstract
In an aspect, a method is provided for forming a silicon-on-insulator (SOI) layer. The method includes the steps of (1) providing a silicon substrate; (2) selectively implanting the silicon substrate with oxygen using a low implant energy to form an ultra-thin patterned seed layer; and (3) employing the ultra-thin patterned seed layer to form a patterned SOI layer on the silicon substrate. Numerous other aspects are provided.
Claims6
A substrate, comprising:
- a bulk silicon substrate;
- one or more buried oxide regions forming a buried oxide (BOX) layer within at least a portion of the bulk silicon substrate;
- and
- one or more silicon-on-insulator (SOI) regions overlying respective BOX regions thereby forming a patterned SOI seed layer overlying the BOX layer;
- wherein the patterned SOI seed layer is ultra-thin.
2 more elements
Dependencies are inferred from the claim text.