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US 2008/0157201 A1Published application
Electrically Programmable Fuse
AssigneeTexas Instruments Incorporated
InventorAndrew Marshall
Life of this patent
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Abstract
A semiconductor device includes a fin-fuse and an SOI transistor. The SOI transistor is located on an SOI substrate and has a source region and a drain region. The fin-fuse is connected to one of the source/drain regions and has a fusible link located on the SOI substrate. The fusible link has a homogeneous dopant concentration.
Claims20
An electrically programmable fuse for use in a semiconductor device, comprising:
- a transistor having a transistor body formed of a crystalline semiconductor layer over and in contact with an SOI substrate;
- a programming circuit connected to a gate of said transistor;
- a sense circuit connected to a source or a drain of said transistor;
- and
- a fuse having a terminal connected to said source or drain, said fuse including a fin formed of said crystalline semiconductor layer on said SOI substrate, said fin having a substantially homogeneous dopant concentration.
2 more elements
A semiconductor device, comprising:
- an SOI transistor located on an SOI substrate and having a source region and a drain region;
- and
- a fin-fuse having a fusible link with a homogeneous dopant concentration located on said SOI substrate and having a terminal connected to one of said source/drain regions.
A method of forming a fuse for use in a semiconductor device, comprising:
- forming a transistor body of an SOI transistor on an SOI substrate, including forming source/drain regions;
- forming a fusible link located on said SOI substrate simultaneously with forming said transistor body, said fin having a substantially homogeneous dopant concentration.
Dependencies are inferred from the claim text.